Misfit relaxation of theAlN/Al2O3(0001) interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.195329/fulltext
Reference20 articles.
1. Do we really understand dislocations in semiconductors?
2. Quantitative Transmission Electron Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al2O3(0001)
3. Dislocation generation in GaN heteroepitaxy
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