Quantitative Transmission Electron Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al2O3(0001)-Reference-Cited by-同舟云学术

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Quantitative Transmission Electron Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al2O3(0001)

Published:1998-01-15 Issue:Part 1, No. 1 Volume:37 Page:84-89
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kaiser Stephan,Preis Herbert,Gebhardt Wolfgang,Ambacher Oliver,Angerer Helmut,Stutzmann Martin,Rosenauer Andreas,Gerthsen Dagmar

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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