Fluorine atoms in AlAs, GaAs, and InAs: Stable state, diffusion, and carrier passivation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.1821/fulltext
Reference17 articles.
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4. Donor passivation in n-AllnAs layers by fluorine
5. Fluorine diffusion and accumulation in Si step-doped InAlAs layers
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2. Experimental evidence for dislocation-related gettering in metamorphic InP∕InGaAs high electron mobility transistor (HEMT) structures on GaAs substrate;Journal of Applied Physics;2006-08
3. Donor passivation in pseudomorphic-high electron mobility transistors due to plasma-incorporated fluorine impurities observed using x-ray photoemission spectroscopy;Journal of Materials Research;2006-05-01
4. Effect of rapid thermal annealing on the optical and electrical properties of metamorphic high electron mobility transistor structures with composite InGaAs∕InP channel;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
5. Strained epilayers effectively reduce plasma-induced fluorine damage in P-HEMTs;IEEE Transactions on Device and Materials Reliability;2005-12
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