Impacts on access resistance of InP high electron mobility transistors from wafer processing-Reference-Cited by-同舟云学术

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Impacts on access resistance of InP high electron mobility transistors from wafer processing

Published:2020-03 Issue:2 Volume:38 Page:022212
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Ma Rubin¹,Lapointe Jean¹,Storey Craig¹,Poole Philip¹,Jiang Frank²,Seyfollahi Alireza²,Walker Alexandre W.¹^ORCID,Noël Jean-Paul¹,Kam Alicia¹,Densmore Adam²

Affiliation:

1. Advanced Electronics and Photonics Research Centre, National Research Council Canada, 1200 Montreal Road, Ottawa, Ontario K1A 0R6, Canada

2. Herzberg Astronomy and Astrophysics Research Centre, National Research Council Canada, 5071 West Sannich Road, Victoria, British Columbia V9E 2E7, Canada

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5140364

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