Fluorine diffusion and accumulation in Si step-doped InAlAs layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122481
Reference6 articles.
1. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
2. W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/
3. Thermal stability of AlInAs/GaInAs/InP heterostructures
4. Electrical properties of InAlAs/InGaAs modulation doped structure after SiN passivated annealing
5. Degradation mechanism of the AlInAs/GaInAs high electron mobility transistor due to fluorine incorporation
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