Molecular models and activation energies for bonding rearrangement in plasma-depositeda−SiNx:Hdielectric thin films treated by rapid thermal annealing-Reference-Cited by-同舟云学术

Molecular models and activation energies for bonding rearrangement in plasma-depositeda−SiNx:Hdielectric thin films treated by rapid thermal annealing

Published:2001-06-06 Issue:24 Volume:63 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Martínez F. L.,del Prado A.,Mártil I.,González-Diaz G.,Bohne W.,Fuhs W.,Röhrich J.,Selle B.,Sieber I.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.245320/fulltext

Reference52 articles.

1. Control of bonded-hydrogen in plasma-deposited silicon nitrides: Combined plasma-assisted deposition and rapid thermal annealing for the formation of device-quality nitride layers for applications in multilayer dielectrics

2. Non-bonded hydrogen in a-Si:H

3. Properties of Plasma‐Deposited Silicon Nitride

4. Infrared spectroscopy of chemically bonded hydrogen at voids and defects in silicon

5. Metal‐insulator‐semiconductor solar cells with silicon oxynitride tunnel insulator by using rapid thermal processing

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