Control of bonded-hydrogen in plasma-deposited silicon nitrides: Combined plasma-assisted deposition and rapid thermal annealing for the formation of device-quality nitride layers for applications in multilayer dielectrics-Reference-Cited by-同舟云学术

Control of bonded-hydrogen in plasma-deposited silicon nitrides: Combined plasma-assisted deposition and rapid thermal annealing for the formation of device-quality nitride layers for applications in multilayer dielectrics

Published:1995-07 Issue: Volume:187 Page:340-346
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Lu Z.,He S.S.,Ma Y.,Lucovsky G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Deposition of single phase, homogeneous silicon oxynitride by remote plasma-enhanced chemical vapor deposition, and electrical evaluation in metal–insulator–semiconductor devices

2. Fixed and trapped charges at oxide–nitride–oxide heterostructure interfaces formed by remote plasma enhanced chemical vapor deposition

3. Low‐temperature preparation of SiO2/Si(100) interfaces using a two‐step remote plasma‐assisted oxidation‐deposition process

4. Integrated processing of amorphous and microcrystalline Si thin film transistors by plasma-assisted chemical-vapor deposition

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