Comparison of firing stability between p‐ and n‐type polysilicon passivating contacts

Author:

Kang Di1ORCID,Sio Hang Cheong1ORCID,Stuckelberger Josua1,Yan Di2,Phang Sieu Pheng1,Liu Rong3,Truong Thien N.1ORCID,Le Tien1ORCID,Nguyen Hieu T.1,Zhang Xinyu4,Macdonald Daniel1

Affiliation:

1. School of Engineering The Australian National University (ANU) Canberra Australian Capital Territory

2. Department of Electrical and Electronic Engineering University of Melbourne Melbourne Victoria Australia

3. SIMS and Microscopy Facility Western Sydney University Sydney New South Wales Australia

4. Jinko Solar Co., Ltd Shangrao China

Funder

Australian Renewable Energy Agency

Australian Centre for Advanced Photovoltaics

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference51 articles.

1. Passivating contacts and tandem concepts: Approaches for the highest silicon-based solar cell efficiencies

2. Polysilicon passivated junctions: The next technology for silicon solar cells?

3. Surface passivation of crystalline silicon solar cells: Present and future

4. StodolnyM AnkerJ ToolC KoppesM MeweA ManshandenP et al.Novel schemes of p+ polySi hydrogenation implemented in industrial 6″ bifacial front‐and‐rear passivating contacts solar cells. In:35th European Photovoltaic Solar Energy Conference and Exhibition.2018:414‐417.

5. Interdigitated back contact solar cells with polycrystalline silicon on oxide passivating contacts for both polarities

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