Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon-Reference-Cited by-同舟云学术

Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon

Published:2024 Issue: Volume: Page:
ISSN:2755-3701
Container-title:RSC Applied Interfaces
language:en
Short-container-title:RSC Appl. Interfaces

Author:

Pain Sophie L.¹^ORCID,Khorani Edris¹,Yadav Anup¹^ORCID,Niewelt Tim¹²³,Leimenstoll Antonio²,Healy Brendan F. M.¹^ORCID,Walker Marc⁴^ORCID,Walker David⁴^ORCID,Grant Nicholas E.¹^ORCID,Murphy John D.¹^ORCID

Affiliation:

1. School of Engineering, University of Warwick, Coventry, CV4 7AL, UK

2. Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg, Germany

3. Chair for Photovoltaic Energy Conversion, Institute for Sustainable Systems Engineering, University of Freiburg, Emmy-Noether-Straße 2, 79110 Freiburg, Germany

4. Department of Physics, University of Warwick, Coventry, CV4 7AL, UK

Abstract

Hafnium oxide thin films have attracted considerable interest for passivation layers, protective barriers, and anti-reflection coatings. This study presents a systematic investigation into the role of film growth co-reactant on film properties.

Funder

Engineering and Physical Sciences Research Council

Leverhulme Trust

ISIS Neutron and Muon Source

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/LF/D3LF00210A

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