Nature of the dominant deep trap in amorphous silicon nitride
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.8226/fulltext
Reference24 articles.
1. The preparation and C-V characteristics of SiSi3N4 and SiSiO2Si3N4 structures
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3. Simple technique for determination of centroid of nitride charge in MNOS structures
4. Charge centroid and trapping model for MNOS structures
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