Surface transport kinetics in low-temperature silicon deposition determined from topography evolution
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.035311/fulltext
Reference24 articles.
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3. Deposition mechanism of hydrogenated amorphous silicon
4. Surface reaction probabilities and kinetics of H, SiH3, Si2H5, CH3, and C2H5 during deposition of a-Si:H and a-C:H from H2, SiH4, and CH4 discharges
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