Electronic structure ofInyGa1−yAs1−xNx/GaAsmultiple quantum wells in the dilute-Nregime from pressure andk⋅pstudies
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.165321/fulltext
Reference49 articles.
1. Band Anticrossing in GaInNAs Alloys
2. Effect of nitrogen on the band structure of GaInNAs alloys
3. Band structure ofInxGa1−xAs1−yNyalloys and effects of pressure
4. Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content
5. Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01
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