Classical and quantum hall effect measurements in GaInNAs/GaAs quantum wells
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference57 articles.
1. InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor
2. III N V semiconductors for solar photovoltaic applications
3. GaInNAs long-wavelength lasers: progress and challenges
4. GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Integer quantum Hall effect measurement analysis in Ga0.68In0.32N0.017As/GaAs quantum wells with various annealing time;Physica B: Condensed Matter;2021-11
2. The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures;Journal of Physics: Condensed Matter;2021-05-19
3. Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate;Journal of Alloys and Compounds;2021-05
4. The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures;Materials Science in Semiconductor Processing;2021-02
5. Quantum oscillations and interference effects in strained n- and p-type modulation doped GaInNAs/GaAs quantum wells;Journal of Physics D: Applied Physics;2015-07-03
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