GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications-Reference-Cited by-同舟云学术

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GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications

Published:2004-08 Issue:3-4 Volume:268 Page:457-465
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Calvez S.,Hopkins J.-M.,Smith S.A.,Clark A.H.,Macaluso R.,Sun H.D.,Dawson M.D.,Jouhti T.,Pessa M.,Gundogdu K.,Hall K.C.,Boggess T.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference33 articles.

1. GaInNAs;Kondow;Jpn. J. Appl. Phys. 1,1996

2. Continuous wave operation of 1.26μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition;Sato;Electron. Lett.,2000

3. L.M.F. Chirovsky, R.L. Naone, A.W. Jackson, S.R. Prakash, D. Galt, L. Thompson, S.A. Feld, J.G. Wasserbauer, M.J. Dalberth, J. Smith, J.J. Hindi, D.W. Kisker, 1.3 micron VCSEL arrays for telecom applications, Optical Fiber Communication (OFC) Conference 2002, Postdeadline paper, p. 149.

4. H. Riechert, L. Geelhaar, G. Ebbinghaus, A. Lima, A. Ramakrishnan, G. Steinle, “1.3μm VCSELs for fiber-optical communication systems”, Indium Phosphide and Related Materials (IPRM) 2003, Paper PLE2.

5. GaInNAs resonant-cavity-enhanced photodetector operating at 1.3μm;Heroux;Appl. Phys. Lett.,1999

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