Optical Amplification in Dilute Nitride Hot Electron Light Emission–VCSOAs Devices
Author:
Funder
Ministry of Higher Education and Scientific Research in Baghdad/IRAQ
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/s13369-015-1686-x.pdf
Reference18 articles.
1. Calvez S., Hopkins J.M., Smith S.A., Clark A.H., Macaluso R., Sun H.D., Dawson M.D., Jouhti T., Pessa M., Gundogdu K., Hall K.C., Boggess T.F.: GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 μm device applications. J. Cryst. Growth 268, 457–465 (2004)
2. Sun Y., Erol A., Yilmaz M., Arikan M.C., Ulug B., Ulug A., Balkan N., Sopanen M., Reentilä O., Mattila M., Fontaine C., Arnoult A.: Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3μm laser applications. Opt. Quantum Electron. 40, 467–474 (2008)
3. Björlin E.S., Riou B., Abraham P., Piprek J., Chiu Y.-J., Black K.A., Keating A., Bowers J.E.: Long wavelength vertical-cavity semiconductor optical amplifiers. IEEE J. Quantum Electron. 37, 274–281 (2001)
4. Alexandropoulos D., Adams M.J.: GaInNAs-based vertical cavity semiconductor optical amplifiers. J. Phys. Condens. Matter 16, S3345–S3354 (2004)
5. Larson M.C., Kondow M., Kitatani T., Tamura K., Okai M.: Photo pumped lasing at 1.25 μm of GaInNAs-GaAs multiple-quantum-well vertical cavity surface emitting laser. IEEE Photon. Technol. Lett. 9, 1549–1551 (1997)
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