Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01-Reference-Cited by-同舟云学术

Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01

Published:2000-03-06 Issue:10 Volume:76 Page:1279-1281
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Perlin Piotr,Wiśniewski Przemek,Skierbiszewski Czesław,Suski Tadeusz,Kamińska Eliana,Subramanya Sudhir G.,Weber Eicke R.,Mars Dan E.,Walukiewicz Wladek

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.126008

Reference8 articles.

1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

2. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys

3. Quasiparticle excitations inGaAs1−xNxandAlAs1−xNxordered alloys

4. Electronic structure and phase stability ofGaAs1−xNxalloys

5. Band Anticrossing in GaInNAs Alloys

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