Optical study of extended-molecular-layer flat islands in lattice-matchedIn0.53Ga0.47As/InP andIn0.53Ga0.47As/In1−xGaxAsyP1−yquantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles-Reference-Cited by-同舟云学术

Optical study of extended-molecular-layer flat islands in lattice-matchedIn0.53Ga0.47As/InP andIn0.53Ga0.47As/In1−xGaxAsyP1−yquantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles

Published:1992-10-15 Issue:15 Volume:46 Page:9525-9537
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Sauer R.,Nilsson S.,Roentgen P.,Heuberger W.,Graf V.,Hangleiter A.,Spycher R.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.9525/fulltext

Reference48 articles.

1. Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperature

2. Interface disorder in GaAs/AlGaAs quantum wells grown by MBE

3. Reduction of well width fluctuation in AlGaAs-GaAs single quantum well by growth interruption during molecular beam epitaxy

4. Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wells

5. Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption

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