Analysis of SiH and SiN vibrational absorption in amorphousSiNx:H films in terms of a charge-transfer model
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.5315/fulltext
Reference44 articles.
1. Amorphous silicon‐silicon nitride thin‐film transistors
2. Field effect in dc-sputtered a-Si:H in structure using SiNx prepared in situ
3. Study of silicon‐hydrogen bonds at an amorphous silicon/silicon nitride interface using infrared attenuated total reflection spectroscopy
4. Reactive Plasma Deposited Si‐N Films for MOS‐LSI Passivation
5. Electronic structure of hydrogenated and unhydrogenated amorphousSiNx (0≤x≤1.6): A photoemission study
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