Field effect in dc-sputtered a-Si:H in structure using SiNx prepared in situ
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Investigation of the localised state distribution in amorphous Si films
2. Determination of the density of gap states: field effect and surface adsorption
3. Amorphous-silicon field-effect device and possible application
4. Application of amorphous silicon field effect transistors in integrated circuits
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1. Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2Films;Japanese Journal of Applied Physics;2001-07-15
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3. Study of aluminum and gold as the gate electrode material on silicon nitride based MIS devices;Applied Surface Science;2001-02
4. Structural and optical properties of amorphous silicon oxynitride;Journal of Applied Physics;1996
5. Tetrahedron-model analysis of silicon nitride thin films and the effect of hydrogen and temperature on their optical properties;Physical Review B;1994-10-15
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