Photoluminescence determination of well depth ofGa0.47In0.53As/Al0.48In0.52As in an ultrathin single quantum well
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.3806/fulltext
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4. Current suppression induced by conduction-band discontinuity in Al0.35Ga0.65As-GaAs N-p heterojunction diodes
5. Determination of the valence‐band discontinuity between GaAs and (Al,Ga)As by the use ofp+‐GaAs‐(Al,Ga)As‐p−‐GaAs capacitors
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1. Molecular‐beam‐epitaxial growth and characterization of high‐quality alloys and multiple quantum wells on InP substrates using a post‐evaporation‐heated arsenic source;Journal of Applied Physics;1994-09-15
2. Determining energy‐band offsets in quantum wells using only spectroscopic data;Journal of Applied Physics;1993-06-15
3. Photoluminescence properties of the Al0.48In0.52As/InP interface and the diffusion of carriers thereto;Journal of Applied Physics;1993-06
4. Band offsets and transitivity ofIn1−xGaxAs/In1−yAlyAs/InP heterostructures;Physical Review B;1993-03-15
5. Band offset determination in analog graded parabolic and triangular quantum wells of GaAs/AlGaAs and GaInAs/AlInAs;Journal of Applied Physics;1992-05-15
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