Band offsets and transitivity ofIn1−xGaxAs/In1−yAlyAs/InP heterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.6439/fulltext
Reference37 articles.
1. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
2. InGaAs/InAlGaAs hot-electron transistors with current gain of 15
3. Room‐temperature excitons in 1.6‐μm band‐gap GaInAs/AlInAs quantum wells
4. Photoluminescence determination of well depth ofGa0.47In0.53As/Al0.48In0.52As in an ultrathin single quantum well
5. Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunction
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