Determination of the valence‐band discontinuity between GaAs and (Al,Ga)As by the use ofp+‐GaAs‐(Al,Ga)As‐p−‐GaAs capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95076
Reference10 articles.
1. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
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4. Effect of heterojunction spike on the quantum efficiency of an AlGaAs/GaAs heterojunction charge coupled device
5. Parabolic quantum wells with theGaAs−AlxGa1−xAssystem
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