Energy spectrum and structure of thin pseudomorphic InAs quantum wells in an AlAs matrix: Photoluminescence spectra and band-structure calculations-Reference-Cited by-同舟云学术

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Energy spectrum and structure of thin pseudomorphic InAs quantum wells in an AlAs matrix: Photoluminescence spectra and band-structure calculations

Published:2007-10-11 Issue:15 Volume:76 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Shamirzaev Timur S.,Gilinsky Alexanser M.,Kalagin Alexanser K.,Nenashev Alexey V.,Zhuravlev Konstantin S.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.76.155309/fulltext

Reference47 articles.

1. Optical spectroscopic studies of InAs layer transformation on GaAs surfaces

2. Optical investigation of the electronic structure of single ultrathin InAs layers grown pseudomorphically on (100) and (311)AGaAs substrates

3. Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy

4. Heavy- and light-hole character of optical transitions in InAs/GaAs single-monolayer quantum wells

5. Radiative states in type-II GaSb/GaAs quantum wells

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