Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures-Reference-Cited by-同舟云学术

Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures

Published:2023-07-23 Issue:14 Volume:13 Page:2136
ISSN:2079-4991
Container-title:Nanomaterials
language:en
Short-container-title:Nanomaterials

Author:

Shamirzaev Timur S.¹²,Atuchin Victor V.³⁴⁵⁶⁷^ORCID

Affiliation:

1. Laboratory of Physics and Technology of Heterostructures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia

2. Department of Physics, Novosibirsk State University, Novosibirsk 630090, Russia

3. Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia

4. Department of Applied Physics, Novosibirsk State University, Novosibirsk 630090, Russia

5. Research and Development Department, Kemerovo State University, Kemerovo 650000, Russia

6. Department of Industrial Machinery Design, Novosibirsk State Technical University, Novosibirsk 630073, Russia

7. R&D Center “Advanced Electronic Technologies”, Tomsk State University, Tomsk 634034, Russia

Abstract

The vacancy generation dynamics in doped semiconductor heterostructures with quantum dots (QD) formed in the cationic and anionic sublattices of AlAs is studied. We demonstrate experimentally that the vacancy-mediated high temperature diffusion is enhanced (suppressed) in n- and p-doped heterostructures with QDs formed in the cationic sublattice, while the opposite behavior occurs in the heterostructures with QDs formed in the anionic sublattice. A model describing the doping effect on the vacancy generation dynamics is developed. The effect of nonuniform charge carrier spatial distribution arisen in heterostructures at high temperatures on the vacancy generation and diffusion is revealed.

Funder

Russian Science Foundation

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

Link

https://www.mdpi.com/2079-4991/13/14/2136/pdf

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