X-ray interference method for studying interface structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.3632/fulltext
Reference17 articles.
1. Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)
2. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
3. Schottky Barrier Heights and the Continuum of Gap States
4. Real-space determination of atomic structure and bond relaxation at theNiSi2-Si(111) interface
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