Band gap of strain-symmetrized, short-period Si/Ge superlattices-Reference-Cited by-同舟云学术

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Band gap of strain-symmetrized, short-period Si/Ge superlattices

Published:1992-11-15 Issue:19 Volume:46 Page:12857-12860
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Olajos Janos,Engvall Jesper,Grimmeiss Hermann G.,Menczigar Ulrich,Abstreiter Gerhard,Kibbel Horst,Kasper Erich,Presting Hartmut

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.12857/fulltext

Reference31 articles.

1. Structurally induced optical transitions in Ge-Si superlattices

2. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure

3. New optical transitions in strained Si-Ge superlattices

4. Structural and electronic properties of epitaxial thin-layerSinGensuperlattices

5. Theory of optical transitions in Si/Ge(001) strained-layer superlattices

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The origin to various PL-bands in Si/Ge strain-symmetrized superlattices;Microelectronic Engineering;1998-08

2. Spectroscopy of band-to-band optical transitions in Si-Ge alloys and superlattices;Physical Review B;1998-04-15

3. Photoluminescence fromSi/SiO2single quantum wells by selective excitation;Physical Review B;1997-12-15

4. Interfaces of strained layer (Ge[sub n]Si[sub m])[sub p] superlattices studied by second-harmonic generation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-07

5. Optical properties ofSimGenssuperlattices: A CPA treatment of the interface diffusion;Physical Review B;1997-04-15

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