Spectroscopy of band-to-band optical transitions in Si-Ge alloys and superlattices-Reference-Cited by-同舟云学术

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Spectroscopy of band-to-band optical transitions in Si-Ge alloys and superlattices

Published:1998-04-15 Issue:15 Volume:57 Page:9128-9140
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Pearsall T. P.,Colace L.,DiVergilio Adam,Jäger W.,Stenkamp D.,Theodorou Georgios,Presting Hartmut,Kasper Erich,Thonke Klaus

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.9128/fulltext

Reference27 articles.

1. High-Speed Silicon-Germanium Electronics

2. Heterojunction GexSi1-x/Si infrared detectors and focal plane arrays

3. Electroluminescence at room temperature of a SinGemstrained‐layer superlattice

4. Electronic and optical properties of Ge-Si superlattices

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1. Band-Gap Determination from Photoconductivity Excitation Spectra;Journal of Applied Spectroscopy;2022-07

2. BAND GAP DETERMINATION FROM PHOTOCONDUCTIVITY EXCITATION SPECTRA;Journal of Applied Spectroscopy;2022-05-18

3. Electronic states in hydrogenated nanocrystalline silicon thin films detected by photocurrent technique;Applied Physics Letters;2013-03-25

4. A review on silicene — New candidate for electronics;Surface Science Reports;2012-01

5. Optical gain in short period Si/Ge superlattices on [001]-SiGe substrates;Journal of Applied Physics;2011-10-15

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