Electronic and optical properties of Ge-Si superlattices-Reference-Cited by-同舟云学术

Electronic and optical properties of Ge-Si superlattices

Published:1994-01 Issue:2 Volume:18 Page:97-152
ISSN:0079-6727
Container-title:Progress in Quantum Electronics
language:en
Short-container-title:Progress in Quantum Electronics

Author:

Pearsall T.P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Statistical and Nonlinear Physics

Reference143 articles.

1. Strained-layer Superlattices: Physics,1990

2. Strained-layer Superlattices: Technology,1991

3. Group-IV compounds;Kasper,1991

4. Initial Stages of Silicon Molecular Beam Epitaxy;Hoeven,1990

5. A Review of theoretical and experimental work on the structure of GeXSi1-x strained layers and superlattices with extensive bibliography;Jain;Adv. Phys.,1990

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