The origin to various PL-bands in Si/Ge strain-symmetrized superlattices-Reference-Cited by-同舟云学术

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The origin to various PL-bands in Si/Ge strain-symmetrized superlattices

Published:1998-08 Issue: Volume:43-44 Page:165-170
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Olajos Janos,Nilsson Stefan,Gail Markus,Abstreiter Gerhard

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Enhanced band-gap luminescence in strain-symmetrized (Si)m/(Ge)nsuperlattices

2. Photo- and electroluminescence in short-period Si/Ge superlattice structures

3. Optical anisotropy of SiGe superlattices

4. Band gap of strain-symmetrized, short-period Si/Ge superlattices

5. Optical spectra of SixGe1−xalloys

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