Pb1interface defect in thermal(100)Si/SiO2: 29Sihyperfine interaction
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.15801/fulltext
Reference40 articles.
1. Characterization of Si/SiO2 interface defects by electron spin resonance
2. The silicon-silicon dioxide system: Its microstructure and imperfections
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4. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
5. Electronic traps andPbcenters at the Si/SiO2interface: Band‐gap energy distribution
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