Luminescence excitation spectroscopy onGa0.47In0.53As/Al0.48In0.52As quantum-well heterostructures
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Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.4214/fulltext
Reference16 articles.
1. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
2. Ga0.47In0.53As/Al0.48In0.52As multiquantum-well LEDs emitting at 1.6 μm
3. Optical properties of GaInAs/AlInAs single quantum wells
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4. Photocurrent spectroscopy of 5‐nm‐wide InGaAs/InAlAs quantum wells and quadratic dependence of optical transition energies on quantum numbers;Journal of Applied Physics;1995-10-15
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