STM study ofC2H2adsorption on Si(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.4648/fulltext
Reference19 articles.
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2. Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H‐SiC: Crystal face dependence
3. Simulations and experiments of SiC heteroepitaxial growth on Si(001) surface
4. Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy
5. Microscopic mechanisms of accurate layer-by-layer growth of β-SiC
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