Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H‐SiC: Crystal face dependence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109257
Reference11 articles.
1. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
2. Prospects for device implementation of wide band gap semiconductors
3. X‐ray diffraction and ion backscattering study of thermally annealed Pd/SiC and Ni/SiC
4. Investigation of thin‐film Ni/single‐crystal SiC interface reaction
5. Solid state reaction of titanium and (0001) α-SiC
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