High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers
Author:
Affiliation:
1. NTT Basic Research Laboratories, NTT Corporation, Atsugi, Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9721042/09673751.pdf?arnumber=9673751
Reference34 articles.
1. GaN FETs for microwave and high-temperature applications
2. Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature
3. Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI
4. Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors
5. High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates
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