Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature
Author:
Funder
DOE NNSA
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference33 articles.
1. Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices
2. Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
3. High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
4. Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack
5. AlGaN Channel HEMT With Extremely High Breakdown Voltage
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