Luminescence kinetics of intrinsic excitonic states quantum-mechanically bound near high-quality (n−-type GaAs)/(p-typeAlxGa1−xAs) heterointerfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.8113/fulltext
Reference69 articles.
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3. Optical investigation of the exciton transfer between growth islands of different well widths in GaAs/AlxGa1−xAs quantum wells
4. Temperature dependence of the exciton population in emission spectra of GaAs single quantum wells with enlarged monolayer-flat growth islands
5. Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces
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