Enhanced exciton photoluminescence in the selectively Si-doped GaAs/AlxGa1−xAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3483240
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1. Impurity-assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation;St. Petersburg Polytechnical University Journal: Physics and Mathematics;2016-12
2. Photoluminescence and the gallium problem for highest-mobility GaAs/AlGaAs-based 2d electron gases;Journal of Crystal Growth;2016-05
3. The Increase of Radiative Lifetime of Free Excitons in Selectively Si-doped GaAs/AlxGa1-xAs Heterostructures;Materials Science;2014-06-17
4. Photoluminescence properties of heavily doped heterostructures based on (Al x Ga1 − x As)1 − y Si y solid solutions;Physics of the Solid State;2013-10
5. Dynamic photoluminescence studies of vertical n+/n-GaAs/Al0.2Ga0.8As structures designed for microwave electronics;Physica Scripta;2013-05-20
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