H-band emission in single heterojunctions
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference6 articles.
1. Exciton properties in p-type GaAs/AlxGa1−xAs quantum wells in the high doping regime;Ferreira;Phys. Rev. B,1996
2. Observation of the Fermi-edge singularity in n-doped single asymmetric quantum wells: the influence of residual acceptors;Qu;Physica E,2001
3. New photoluminescence effects of carrier confinement at an AlGaAs/GaAs heterojunction interface;Yuan;J. Appl. Phys.,1985
4. Near-band-gap luminescence from a GaAs–AlGaAs interface;t'Hooft;Appl. Phys. Lett.,1987
5. Luminescence kinetics of intrinsic excitonic states quantum-mechanically bound near high-quality (n−-type GaAs)/(p-type AlxGa1−xAs) heterointerfaces;Gilliland;Phys. Rev. B,1994
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