Photoluminescence-linewidth-derived reduced exciton mass forInyGa1−yAs1−xNxalloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.7144/fulltext
Reference29 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
3. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
4. GaInNAs: a novel material for long-wavelength semiconductor lasers
5. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
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1. Strong excitation intensity dependence of the photoluminescence line shape in GaAs1−xBix single quantum well samples;Journal of Applied Physics;2013-04-14
2. Charge separation and temperature-induced carrier migration in Ga1−xInxNyAs1−ymultiple quantum wells;Physical Review B;2011-07-05
3. Effect of nitrogen interactions on photoluminescence linewidth broadening in dilute nitride semiconductors;Physical Review B;2008-12-23
4. THE ELECTRONIC BAND STRUCTURE OF GaN, GaAs AND InxGa1-xAs1-yNy ALLOYS;International Journal of Modern Physics B;2007-10-10
5. Electron Mass in Dilute Nitrides and its Anomalous Dependence on Hydrostatic Pressure;Physical Review Letters;2007-04-02
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