Strong excitation intensity dependence of the photoluminescence line shape in GaAs1−xBix single quantum well samples-Reference-Cited by-同舟云学术

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Strong excitation intensity dependence of the photoluminescence line shape in GaAs1−xBix single quantum well samples

Published:2013-04-14 Issue:14 Volume:113 Page:144308
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mazur Yu. I.,Dorogan V. G.,Schmidbauer M.,Tarasov G. G.,Johnson S. R.,Lu X.,Ware M. E.,Yu S.-Q.,Tiedje T.,Salamo G. J.

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4801429

Reference25 articles.

1. Molecular beam epitaxy growth of GaAs1−xBix

2. Growth and properties of the dilute bismide semiconductor GaAs_{1−xBi_{x a complementary alloy to the dilute nitrides}}

3. Composition dependence of photoluminescence of GaAs1−xBix alloys

4. Structural investigation of GaAs1−xBix/GaAs multiquantum wells

5. GaBiAs: A material for optoelectronic terahertz devices

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1. Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE;Journal of Applied Physics;2020-03-31

2. Bismuth-induced band-tail states in GaAsBi probed by photoluminescence;Applied Physics Letters;2019-02-04

3. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates;Semiconductor Science and Technology;2018-07-17

4. Optical properties of n- and p-type modulation doped GaAsBi/AlGaAs quantum well structures;Journal of Alloys and Compounds;2018-03

5. Luminescent properties of GaAsBi/GaAs double quantum well heterostructures;Journal of Luminescence;2017-08

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