Electron Mass in Dilute Nitrides and its Anomalous Dependence on Hydrostatic Pressure-Reference-Cited by-同舟云学术

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Electron Mass in Dilute Nitrides and its Anomalous Dependence on Hydrostatic Pressure

Published:2007-04-02 Issue:14 Volume:98 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Pettinari G.,Polimeni A.,Masia F.,Trotta R.,Felici M.,Capizzi M.,Niebling T.,Stolz W.,Klar P. J.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.98.146402/fulltext

Reference25 articles.

1. Band Anticrossing in GaInNAs Alloys

2. Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements inGaAs1−xNx

3. Unification of the Band Anticrossing and Cluster-State Models of Dilute Nitride Semiconductor Alloys

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