Opposite Hydrogen Behaviors in GaAsN and InAsN Alloys: Band Gap Opening Versus Donor Doping
Author:
Affiliation:
1. Istituto di Struttura della Materia-CNR (ISM-CNR), Via Salaria Km 29.5, Monterotondo Stazione, I-00016 Montelibretti, Italy
2. Dipartimento di Fisica and CNISM, Sapienza Università di Roma, Piazzale A. Moro 2, I-00185 Roma, Italy
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c05098
Reference59 articles.
1. Atomic and molecular hydrogen in gallium arsenide: A theoretical study
2. Hydrogen interaction with shallow and deep centers in GaAs
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4. Hydrogenated Dilute Nitride Semiconductors
5. The opportunity of using InGaAsN/AlGaAs quantum wells for extended short-wavelength infrared photodetection
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