Photoluminescence from the quasi-two-dimensional electron gas at a single silicon δ-doped layer in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.7280/fulltext
Reference22 articles.
1. Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructures
2. Subband physics for a “realistic” δ-doping layer
3. The σ doping layer: Electronic properties and device perspectives
4. Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensions
5. Effect of substrate temperature on migration of Si in planar‐doped GaAs
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