Photoluminescence spectroscopy in GaAs/AlAs superlattices as a function of temperature and pressure: The influence of sample quality
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.14091/fulltext
Reference28 articles.
1. X‐point excitons in AlAs/GaAs superlattices
2. Optical properties and band structure of short-period GaAs/AlAs superlattices
3. Photoluminescence Studies Of Type II GaAs/AlAs Quantum Wells Grown By MBE
4. Localized indirect excitons in a short-period GaAs/AlAs superlattice
5. Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlattices
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1. Effects of hydrostatic pressure on the Coulomb-bound states in GaAs–Ga1−xAlxAs semiconductor superlattices;Superlattices and Microstructures;2008-12
2. Recombination of excitons bound on donor–acceptor impurity pairs in δ‐doped type II GaAs/AlAs superlattices;physica status solidi (c);2003-01-27
3. Solutions of thek⋅pHamiltonian in confined systems with a highly nonparabolic dispersion and consequences for AlAs quantum wells;Physical Review B;2002-12-20
4. Characterization of ultrashort-period GaAs/AlAs superlattices by exciton photoluminescence;Materials Science and Engineering: C;2002-01
5. Evidence for interlayer donor–acceptor recombination in type II GaAs/AlAs superlattices;Superlattices and Microstructures;2000-08
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