Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlattices-Reference-Cited by-同舟云学术

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Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlattices

Published:1987-04-15 Issue:12 Volume:35 Page:6207-6212
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Danan G.,Etienne B.,Mollot F.,Planel R.,Jean-Louis A. M.,Alexandre F.,Jusserand B.,Le Roux G.,Marzin J. Y.,Savary H.,Sermage B.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.35.6207/fulltext

Reference15 articles.

1. Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices

2. AlAs/n‐GaAs superlattice and its application to high‐quality two‐ dimensional electron gas systems

3. Optical properties of (AlAs)n(GaAs)nsuperlattices grown by metalorganic chemical vapor deposition

4. Optical properties of quantum wells with ultrathin‐layer superlattice barriers

5. Energy levels and electron wave functions in semiconductor quantum wells having superlattice alloylike material (0.9 nm GaAs/0.9 nm AlGaAs) as barrier layers

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