AlAs/n‐GaAs superlattice and its application to high‐quality two‐ dimensional electron gas systems

Author:

Baba Toshio,Mizutani Takashi,Ogawa Masaki

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Optimization of heterostructure design for switching pHEMT transistors;Materials Science in Semiconductor Processing;2023-01

2. Gallium arsenide heterostructures;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

3. Self-consistent analysis of persistent photoconductivity data in Si δ-doped AlxGa1−xAs (x=0.32) superlattices;Journal of Applied Physics;1998-11

4. Semiconductor Switching Devices. .Future Trends;Defence Science Journal;1998-01-01

5. Influence of surface and interface states on the electrical properties of an Al0.2Ga0.8As/In0.18Ga0.82As δ -modulation-doped heterostructure;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05

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