Influence of surface and interface states on the electrical properties of an Al0.2Ga0.8As/In0.18Ga0.82As δ -modulation-doped heterostructure
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Published:1996-05
Issue:3
Volume:14
Page:2293
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
2 articles.
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1. Surface states on n-type Al[sub 0.24]Ga[sub 0.76]As characterized by deep-level transient spectroscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
2. The influence of interface states on the characteristics of HEMT DC output;1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)