Energy levels and electron wave functions in semiconductor quantum wells having superlattice alloylike material (0.9 nm GaAs/0.9 nm AlGaAs) as barrier layers-Reference-Cited by-同舟云学术

Energy levels and electron wave functions in semiconductor quantum wells having superlattice alloylike material (0.9 nm GaAs/0.9 nm AlGaAs) as barrier layers

Published:1985-08 Issue:3 Volume:47 Page:295-297
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sakaki H.,Tsuchiya M.,Yoshino J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.96197

Reference16 articles.

1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices

2. Two-dimensional electron gas at a semiconductor-semiconductor interface

3. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions

4. A New AlGaAs/GaAs Heterojunction FET with Insulated Gate Structure (MISSFET)

5. A New Highly-Conductive (AlGa)As/GaAs/(AlGa)As Selectively-Doped Double-Heterojunction Field-Effect Transistor (SD-DH-FET)

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