Recombination of excitons bound on donor–acceptor impurity pairs in δ‐doped type II GaAs/AlAs superlattices-Reference-Cited by-同舟云学术

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Recombination of excitons bound on donor–acceptor impurity pairs in δ‐doped type II GaAs/AlAs superlattices

Published:2003-01-27 Issue:2 Volume: Page:657-660
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Gulyaev D. V.¹,Gilinsky A. M.¹,Toropov A. I.¹,Bakarov A. K.¹,Zhuravlev K. S.¹

Affiliation:

1. Institute of Semiconductor Physics, Russian Academy of Sciences, Lavrenteva 13, 630090 Novosibirsk, Russia

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306178

Reference9 articles.

1. Photoluminescence spectroscopy in GaAs/AlAs superlattices as a function of temperature and pressure: The influence of sample quality

2. Nature of the lowest electron states in short period GaAs-AlAs superlattices of type II

3. Type-I–type-II transition in ultra-short-period GaAs/AlAs superlattices

4. X‐point excitons in AlAs/GaAs superlattices

5. Donor-acceptor recombination in type-II GaAs/AlAs superlattices

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