Evidence for interlayer donor–acceptor recombination in type II GaAs/AlAs superlattices-Reference-Cited by-同舟云学术

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Evidence for interlayer donor–acceptor recombination in type II GaAs/AlAs superlattices

Published:2000-08 Issue:2 Volume:28 Page:105-110
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zhuravlev K.S.,Petrakov D.A.,Gilinsky A.M.,Shamirzaev T.S.,Preobrazhenskii V.V.,Semyagin B.R.,Putyato M.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Exponential distribution of the radiative decay rates induced by alloy scattering in an indirect-gap semiconductor

2. Optical properties and band structure of short-period GaAs/AlAs superlattices

3. Photoluminescence spectroscopy in GaAs/AlAs superlattices as a function of temperature and pressure: The influence of sample quality

4. Type-I–type-II transition in ultra-short-period GaAs/AlAs superlattices

5. Semiconductor Characterization: Present Status and Future Needs;Gilinsky,1996

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1. Self-assembled Quantum Dots: From Stranski–Krastanov to Droplet Epitaxy;Self-Assembly of Nanostructures;2011-09-20

2. Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots;Nanotechnology;2010-03-23

3. Luminescence and energy structure of ultrathin InAs/AlAs quantum wells;physica status solidi (c);2008-02-20

4. Energy spectrum and structure of thin pseudomorphic InAs quantum wells in an AlAs matrix: Photoluminescence spectra and band-structure calculations;Physical Review B;2007-10-11

5. Mechanism of the effect of the electric field of a surface acoustic wave on the low-temperature photoluminescence kinetics in type-II GaAs/AlAs superlattices;Semiconductors;2007-02

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